RV2C010UNT2L
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 20V 1A DFN1006-3
$0.45
Available to order
Reference Price (USD)
8,000+
$0.05940
16,000+
$0.05280
24,000+
$0.04950
56,000+
$0.04620
Exquisite packaging
Discount
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The RV2C010UNT2L by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RV2C010UNT2L is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VML1006
- Package / Case: SC-101, SOT-883
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