ISP98DP10LMXTSA1
Infineon Technologies
Infineon Technologies
SMALL SIGNAL MOSFETS PG-SOT223-4
$0.82
Available to order
Reference Price (USD)
1+
$0.82000
500+
$0.8118
1000+
$0.8036
1500+
$0.7954
2000+
$0.7872
2500+
$0.779
Exquisite packaging
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Meet the ISP98DP10LMXTSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The ISP98DP10LMXTSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 165µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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