ISZ0804NLSATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TSDSON-8
$1.71
Available to order
Reference Price (USD)
1+
$1.71000
500+
$1.6929
1000+
$1.6758
1500+
$1.6587
2000+
$1.6416
2500+
$1.6245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISZ0804NLSATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the ISZ0804NLSATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-26
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPB65R041CFD7ATMA1
GeneSiC Semiconductor
G3R60MT07J
Diodes Incorporated
DMNH4005SPSQ-13
Renesas Electronics America Inc
UPA2350BT1P-E4-A
STMicroelectronics
STU3N65M6
IXYS
IXTQ32P20T
Renesas
UPA2782GR-E1-A
Diodes Incorporated
DMNH15H110SPS-13
Renesas
NP110N055PUJ-E1B-AY
Renesas Electronics America Inc