NP110N055PUJ-E1B-AY
Renesas
Renesas
NP110N055PUJ-E1B-AY - SWITCHINGN
$5.51
Available to order
Reference Price (USD)
1+
$5.51204
500+
$5.4569196
1000+
$5.4017992
1500+
$5.3466788
2000+
$5.2915584
2500+
$5.236438
Exquisite packaging
Discount
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Meet the NP110N055PUJ-E1B-AY by Renesas, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NP110N055PUJ-E1B-AY stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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