IV1Q12050T3
Inventchip
Inventchip
SIC MOSFET, 1200V 50MOHM, TO-247
$39.28
Available to order
Reference Price (USD)
1+
$39.28000
500+
$38.8872
1000+
$38.4944
1500+
$38.1016
2000+
$37.7088
2500+
$37.316
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IV1Q12050T3 from Inventchip, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IV1Q12050T3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Inventchip's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 327W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
onsemi
NTD6416ANT4G
Infineon Technologies
SPI20N60CFDXKSA1
Infineon Technologies
BSC025N03LSGATMA1
onsemi
BSS138LT1G
onsemi
2N7002ET7G
onsemi
NTMFS6H818NT1G
onsemi
FQD13N10LTM
Taiwan Semiconductor Corporation
TSM020N04LCR RLG
Infineon Technologies
AUIRF4104STRL
Panjit International Inc.