IXBT20N360HV
IXYS

IXYS
IGBT 3600V 70A TO-268HV
$0.00
Available to order
Reference Price (USD)
1+
$39.92000
10+
$36.92700
30+
$33.93300
120+
$31.53758
270+
$28.94274
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXBT20N360HV Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXBT20N360HV ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXBT20N360HV into your projects for superior results.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3600 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 220 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 430 W
- Switching Energy: 15.5mJ (on), 4.3mJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 18ns/238ns
- Test Condition: 1500V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 1.7 µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA