IXGP2N100
IXYS
IXYS
IGBT 1000V 4A 25W TO220AB
$0.00
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Reference Price (USD)
50+
$2.59880
Exquisite packaging
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Enhance your electronic projects with the IXGP2N100 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGP2N100 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGP2N100 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 4 A
- Current - Collector Pulsed (Icm): 8 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A
- Power - Max: 25 W
- Switching Energy: 560µJ (off)
- Input Type: Standard
- Gate Charge: 7.8 nC
- Td (on/off) @ 25°C: 15ns/300ns
- Test Condition: 800V, 2A, 150Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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