IXEH25N120D1
IXYS
IXYS
IGBT 1200V 36A 200W TO247AD
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Enhance your electronic projects with the IXEH25N120D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXEH25N120D1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXEH25N120D1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 36 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
- Power - Max: 200 W
- Switching Energy: 4.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 20A, 68Ohm, 15V
- Reverse Recovery Time (trr): 130 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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