IXFH15N60
IXYS
IXYS
MOSFET N-CH 600V 15A TO-247AD
$10.15
Available to order
Reference Price (USD)
1+
$10.14733
500+
$10.0458567
1000+
$9.9443834
1500+
$9.8429101
2000+
$9.7414368
2500+
$9.6399635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFH15N60 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFH15N60 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Rohm Semiconductor
RS3G160ATTB1
Fairchild Semiconductor
FQPF13N50C
Rohm Semiconductor
RP1E090RPTR
Rohm Semiconductor
R8011KNXC7G
Infineon Technologies
IRFR2307ZTRLPBF
Vishay Siliconix
SQS411ENW-T1_GE3
Nexperia USA Inc.
PSMN1R0-30YLC,115
Renesas Electronics America Inc
N0601N-ZK-E1-AY
Infineon Technologies
IPB64N25S320ATMA1
Infineon Technologies