IXFH18N65X2
IXYS
IXYS
MOSFET N-CH 650V 18A TO247
$4.98
Available to order
Reference Price (USD)
1+
$4.98370
500+
$4.933863
1000+
$4.884026
1500+
$4.834189
2000+
$4.784352
2500+
$4.734515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXFH18N65X2 from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXFH18N65X2 ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Fairchild Semiconductor
HUF76619D3S
Microchip Technology
MSC180SMA120B
Infineon Technologies
IPP65R420CFDXKSA2
Infineon Technologies
BSC090N03MSGXT
Rohm Semiconductor
R6011END3TL1
onsemi
NCV8440ASTT3G
Toshiba Semiconductor and Storage
TK22A65X5,S5X
Diodes Incorporated
DMP2305U-7
Vishay Siliconix
SQJ174EP-T1_GE3
Infineon Technologies