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IXFH20N85X

IXYS
IXFH20N85X Preview
IXYS
MOSFET N-CH 850V 20A TO247
$10.13
Available to order
Reference Price (USD)
1+
$6.95000
30+
$5.69900
120+
$5.14300
510+
$4.30900
1,020+
$3.89200
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

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