IXFH6N100F
IXYS
IXYS
MOSFET N-CH 1000V 6A TO247
$0.00
Available to order
Reference Price (USD)
1+
$7.83000
30+
$6.41667
120+
$5.79050
510+
$4.85151
1,020+
$4.38200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFH6N100F by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFH6N100F is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXFH)
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
ZXMP3F35N8TA
Infineon Technologies
IRFS7730PBF
Infineon Technologies
IRFU48ZPBF
Infineon Technologies
IRF7404QTRPBF
STMicroelectronics
STP90N55F4
Infineon Technologies
IPS031N03L G
Comchip Technology
CMS06N10V8-HF
Fairchild Semiconductor
FQD20N06TF
Harris Corporation
IRFF433
Alpha & Omega Semiconductor Inc.