IXFN170N10
IXYS
IXYS
MOSFET N-CH 100V 170A SOT-227B
$35.76
Available to order
Reference Price (USD)
10+
$34.94600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXFN170N10 from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXFN170N10 ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 515 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Vishay Siliconix
SIJH600E-T1-GE3
STMicroelectronics
STL52N60DM6
STMicroelectronics
STFU13N80K5
onsemi
NTD4809NH-35G
Vishay Siliconix
SI7115DN-T1-GE3
Infineon Technologies
IPD50N06S409ATMA2
Diodes Incorporated
DMN3300U-7
Texas Instruments
CSD25481F4T
STMicroelectronics
STB70NF03LT4
Infineon Technologies