IXFR30N60P
IXYS
IXYS
MOSFET N-CH 600V 15A ISOPLUS247
$11.16
Available to order
Reference Price (USD)
30+
$8.07700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFR30N60P by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFR30N60P is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 166W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPD60R600P7ATMA1
Diodes Incorporated
DMN3069L-13
Texas Instruments
TPIC2202KC
onsemi
NVMFS6H858NLT1G
Vishay Siliconix
SI4122DY-T1-GE3
STMicroelectronics
STD20NF06LAG
onsemi
BS170-D26Z
Infineon Technologies
AUIRLL024NTR
Fairchild Semiconductor
FDD8874
IXYS