IXFT26N60Q
IXYS
IXYS
MOSFET N-CH 600V 26A TO268
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The IXFT26N60Q from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXFT26N60Q offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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