IXFT30N50P
IXYS
IXYS
MOSFET N-CH 500V 30A TO268
$12.34
Available to order
Reference Price (USD)
30+
$5.45300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFT30N50P from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXFT30N50P offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
onsemi
FCPF250N65S3R0L-F154
Diodes Incorporated
DMN3730U-7
Infineon Technologies
IRLR2905TRLPBF
GeneSiC Semiconductor
G3R12MT12K
Rohm Semiconductor
RT1A060APTR
Vishay Siliconix
SQM60030E_GE3
Diodes Incorporated
DMP6185SK3-13
onsemi
FDS6679AZ
Vishay Siliconix
SQJA86EP-T1_GE3
Rectron USA