IXFV20N80P
IXYS
IXYS
MOSFET N-CH 800V 20A PLUS220
$0.00
Available to order
Reference Price (USD)
50+
$6.23200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFV20N80P by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXFV20N80P is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
Related Products
onsemi
NTLJD3182FZTBG
Renesas Electronics America Inc
HAT2168H-EL-E
Nexperia USA Inc.
BUK7907-55ATE,127
Infineon Technologies
IRL2203NSTRRPBF
Panasonic Electronic Components
FJ4B01100L1
Alpha & Omega Semiconductor Inc.
AON7450
Infineon Technologies
IRF3707SPBF
Infineon Technologies
IPD60R520CP
IXYS
IXUC160N075
Infineon Technologies