IXGA20N120B
IXYS

IXYS
IGBT 1200V 40A 150W TO263
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Reference Price (USD)
50+
$6.52200
Exquisite packaging
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Enhance your electronic projects with the IXGA20N120B Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGA20N120B ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGA20N120B for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 6.5mJ (off)
- Input Type: Standard
- Gate Charge: 63 nC
- Td (on/off) @ 25°C: 28ns/400ns
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA