APT30GS60BRDQ2G
Microchip Technology
Microchip Technology
IGBT 600V 54A 250W SOT227
$0.00
Available to order
Reference Price (USD)
1+
$8.65000
10+
$7.78300
25+
$7.09160
100+
$6.39980
250+
$5.88088
500+
$5.36196
1,000+
$4.67010
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the APT30GS60BRDQ2G Single IGBT transistor by Microchip Technology, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the APT30GS60BRDQ2G ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the APT30GS60BRDQ2G for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 113 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
- Power - Max: 250 W
- Switching Energy: 570µJ (off)
- Input Type: Standard
- Gate Charge: 145 nC
- Td (on/off) @ 25°C: 16ns/360ns
- Test Condition: 400V, 30A, 9.1Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
Related Products
Infineon Technologies
IRG4BC30KDPBF-INF
IXYS
IXGT50N90B2D1
Infineon Technologies
IRG4PC30K
onsemi
NGTB50N60L2WG
onsemi
NGD8201NT4
IXYS
IXGT20N100
IXYS
IXGT20N60BD1
Fairchild Semiconductor
ISL9V2040P3
Infineon Technologies
IRG4IBC30KDPBF-INF
Infineon Technologies