IXGH20N120
IXYS
IXYS
IGBT 1200V 40A 150W TO247
$0.00
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Reference Price (USD)
30+
$6.47900
Exquisite packaging
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Discover the IXGH20N120 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXGH20N120 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXGH20N120 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 6.5mJ (off)
- Input Type: Standard
- Gate Charge: 63 nC
- Td (on/off) @ 25°C: 28ns/400ns
- Test Condition: 800V, 20A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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