STGB30H60DF
STMicroelectronics
STMicroelectronics
IGBT 600V 60A 260W D2PAK
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Discover the STGB30H60DF Single IGBT transistor by STMicroelectronics, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the STGB30H60DF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the STGB30H60DF for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 350µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 105 nC
- Td (on/off) @ 25°C: 50ns/160ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 110 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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