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IXGM17N100A

IXYS
IXGM17N100A Preview
IXYS
POWER MOSFET TO-3
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Specifications

  • Product Status: Obsolete
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): 68 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
  • Power - Max: 150 W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 17A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE

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