IXGQ50N60C4D1
IXYS
IXYS
IGBT 600V 90A 300W TO3P
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Enhance your electronic projects with the IXGQ50N60C4D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGQ50N60C4D1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGQ50N60C4D1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 220 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
- Power - Max: 300 W
- Switching Energy: 950µJ (on), 840µJ (off)
- Input Type: Standard
- Gate Charge: 113 nC
- Td (on/off) @ 25°C: 40ns/270ns
- Test Condition: 400V, 36A, 10Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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