IXYH40N65C3
IXYS
IXYS
IGBT 650V 80A 300W TO247
$0.00
Available to order
Reference Price (USD)
30+
$5.59667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXYH40N65C3 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYH40N65C3 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYH40N65C3 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Power - Max: 300 W
- Switching Energy: 860µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 26ns/106ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
Related Products
Infineon Technologies
IKD06N60RFAATMA1
IXYS
IXGA16N60C2D1
Infineon Technologies
IKW25N120T2XK
IXYS
IXGQ20N120B
Infineon Technologies
IRG7S313UTRLPBF
IXYS
IXGA16N60C2
Infineon Technologies
IRG7PH37K10DPBF
Fairchild Semiconductor
FGB5N60UNDF
IXYS
IXGP24N60C
STMicroelectronics