IXGR50N60B2
IXYS
IXYS
IGBT 600V 68A 200W ISOPLUS247
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the IXGR50N60B2 Single IGBT transistor from IXYS. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IXGR50N60B2 ensures energy efficiency and reliability. Trust IXYS's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 68 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Power - Max: 200 W
- Switching Energy: 550µJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 18ns/190ns
- Test Condition: 480V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
Related Products
onsemi
NGTB40N120FL2WG
IXYS
IXDH35N60BD1
IXYS
IXGQ28N120B
Toshiba Semiconductor and Storage
GT8G133(TE12L,Q)
IXYS
IXGA12N60C
IXYS
IXGT15N120BD1
IXYS
IXGR45N120
STMicroelectronics
STGWF40V60DF
Infineon Technologies
IHD10N60RA
STMicroelectronics