IXGT20N60BD1
IXYS
IXYS
IGBT 600V 40A 150W TO268
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Upgrade your power management systems with the IXGT20N60BD1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGT20N60BD1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGT20N60BD1 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 700µJ (off)
- Input Type: Standard
- Gate Charge: 55 nC
- Td (on/off) @ 25°C: 15ns/110ns
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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