IXGT50N90B2
IXYS
IXYS
IGBT 900V 75A 400W TO268
$0.00
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Reference Price (USD)
30+
$6.88800
Exquisite packaging
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Enhance your electronic projects with the IXGT50N90B2 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGT50N90B2 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGT50N90B2 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Power - Max: 400 W
- Switching Energy: 4.7mJ (off)
- Input Type: Standard
- Gate Charge: 135 nC
- Td (on/off) @ 25°C: 20ns/350ns
- Test Condition: 720V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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