IXGT6N170-TRL
IXYS
IXYS
IXGT6N170 TRL
$4.80
Available to order
Reference Price (USD)
1+
$4.80250
500+
$4.754475
1000+
$4.70645
1500+
$4.658425
2000+
$4.6104
2500+
$4.562375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXGT6N170-TRL Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXGT6N170-TRL ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXGT6N170-TRL for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 20 nC
- Td (on/off) @ 25°C: 40ns/250ns
- Test Condition: 1360V, 6A, 33Ohm, 15V
- Reverse Recovery Time (trr): 36 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
Related Products
Rohm Semiconductor
RGW80TS65EHRC11
IXYS
IXYP20N120A4
Infineon Technologies
IRG4BC30UPBF
Fairchild Semiconductor
FGPF70N30TRDTU
Infineon Technologies
FS200R12PT4
Infineon Technologies
FD1200R17HP4-K_B2
IXYS
IXGF32N170
IXYS
IXXH30N60C3
Harris Corporation
HGTP3N60C3
IXYS