IXGF32N170
IXYS
IXYS
IGBT 1700V 44A 200W I4PAC
$24.37
Available to order
Reference Price (USD)
25+
$17.38520
Exquisite packaging
Discount
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Upgrade your power management systems with the IXGF32N170 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGF32N170 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGF32N170 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 44 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
- Power - Max: 200 W
- Switching Energy: 10.6mJ (off)
- Input Type: Standard
- Gate Charge: 146 nC
- Td (on/off) @ 25°C: 45ns/270ns
- Test Condition: 1020V, 32A, 2.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5 (3 Leads)
- Supplier Device Package: ISOPLUS i4-PAC™
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