IXGX82N120B3
IXYS
IXYS
IGBT 1200V 230A 1250W PLUS247
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Reference Price (USD)
30+
$18.11767
Exquisite packaging
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Optimize your power systems with the IXGX82N120B3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGX82N120B3 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 230 A
- Current - Collector Pulsed (Icm): 500 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
- Power - Max: 1250 W
- Switching Energy: 5mJ (on), 3.3mJ (off)
- Input Type: Standard
- Gate Charge: 350 nC
- Td (on/off) @ 25°C: 30ns/210ns
- Test Condition: 600V, 80A, 2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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