FGA30N120FTDTU
onsemi
onsemi
IGBT 1200V 60A 339W TO3P
$0.00
Available to order
Reference Price (USD)
1+
$6.68000
10+
$5.99800
450+
$4.66200
900+
$4.18320
1,350+
$3.52800
Exquisite packaging
Discount
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Optimize your power systems with the FGA30N120FTDTU Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGA30N120FTDTU delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 339 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 208 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 730 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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