IXSQ20N60B2D1
IXYS
IXYS
IGBT 600V 35A 190W TO3P
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The IXSQ20N60B2D1 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXSQ20N60B2D1 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXSQ20N60B2D1 into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
- Power - Max: 190 W
- Switching Energy: 380µJ (off)
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 30ns/116ns
- Test Condition: -
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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