IXTA90N20X3
IXYS
IXYS
MOSFET N-CH 200V 90A TO263
$7.14
Available to order
Reference Price (USD)
1+
$7.13860
500+
$7.067214
1000+
$6.995828
1500+
$6.924442
2000+
$6.853056
2500+
$6.78167
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXTA90N20X3 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTA90N20X3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Alpha & Omega Semiconductor Inc.
AON6362
Diodes Incorporated
ZVP4525E6TA
NXP Semiconductors
PHP45NQ10T,127
Alpha & Omega Semiconductor Inc.
AOB66613L
onsemi
NVMTS001N06CTXG
Infineon Technologies
IPS65R1K0CEAKMA2
onsemi
NTY100N10G
IXYS
IXTH160N15T
onsemi
FQP55N10
Renesas Electronics America Inc