IXTF6N200P3
IXYS
IXYS
MOSFET N-CH 2000V 4A I4PAC
$33.05
Available to order
Reference Price (USD)
25+
$21.59000
Exquisite packaging
Discount
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Discover the IXTF6N200P3 from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXTF6N200P3 ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2000 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC™
- Package / Case: ISOPLUSi5-Pak™
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