G1002L
Goford Semiconductor
Goford Semiconductor
N100V,RD(MAX)<250M@10V,VTH1.2V~2
$0.52
Available to order
Reference Price (USD)
1+
$0.52000
500+
$0.5148
1000+
$0.5096
1500+
$0.5044
2000+
$0.4992
2500+
$0.494
Exquisite packaging
Discount
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Meet the G1002L by Goford Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The G1002L stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Goford Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3L
- Package / Case: TO-236-3, SC-59, SOT-23-3
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