IXTH16N50D2
IXYS
IXYS
MOSFET N-CH 500V 16A TO247-3
$12.95
Available to order
Reference Price (USD)
1+
$10.45000
10+
$9.40500
30+
$8.56900
120+
$7.73300
270+
$7.10600
510+
$6.47900
1,020+
$5.64300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTH16N50D2 by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXTH16N50D2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPA082N10NF2SXKSA1
Alpha & Omega Semiconductor Inc.
AOT2142L
Sanken
FKI10531
Fairchild Semiconductor
FDI8441
Vishay Siliconix
SI2303CDS-T1-GE3
Fairchild Semiconductor
FQP9N25
Taiwan Semiconductor Corporation
TQM070NB04CR RLG
onsemi
NTP5864NG
IXYS
IXTP12N50PM
Infineon Technologies