IXTH1N450HV
IXYS
IXYS
MOSFET N-CH 4500V 1A TO247HV
$44.66
Available to order
Reference Price (USD)
1+
$32.60000
30+
$27.71000
120+
$25.75400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXTH1N450HV single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXTH1N450HV combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247HV
- Package / Case: TO-247-3 Variant
Related Products
Infineon Technologies
IPL60R085P7AUMA1
Toshiba Semiconductor and Storage
TK62Z60X,S1F
Fairchild Semiconductor
FQD8N25TF
onsemi
NVH4L015N065SC1
Fairchild Semiconductor
FQU2N50BTU
IXYS
IXFP5N100P
Infineon Technologies
SPP07N60C3XKSA1
Infineon Technologies
IPB039N10N3GE8187ATMA1
NTE Electronics, Inc
NTE2399
onsemi