Shopping cart

Subtotal: $0.00

IXTH50P10

IXYS
IXTH50P10 Preview
IXYS
MOSFET P-CH 100V 50A TO247
$11.48
Available to order
Reference Price (USD)
1+
$7.88000
30+
$6.45767
120+
$5.82750
510+
$4.88251
1,020+
$4.41000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

Related Products

Infineon Technologies

BSZ0901NSIATMA1

Goford Semiconductor

GT52N10T

Vishay Siliconix

IRF610SPBF

Vishay Siliconix

IRFR9220TRPBF

STMicroelectronics

STH260N6F6-2

Fairchild Semiconductor

RFD3055

Diodes Incorporated

DMN10H700S-7

Infineon Technologies

IPD60R280CFD7ATMA1

STMicroelectronics

STD45NF75T4

Infineon Technologies

BSP88H6327XTSA1

Top