IXTN21N100
IXYS
IXYS
MOSFET N-CH 1000V 21A SOT227B
$0.00
Available to order
Reference Price (USD)
10+
$32.69000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTN21N100 from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTN21N100 offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
NXP USA Inc.
BUK764R0-75C,118
Vishay Siliconix
SI4836DY-T1-E3
STMicroelectronics
STU10P6F6
STMicroelectronics
STP6N52K3
Infineon Technologies
IRL3803S
Infineon Technologies
BSP298H6327XUSA1
Vishay Siliconix
SI4840DY-T1-E3
Vishay Siliconix
SI5447DC-T1-GE3
Infineon Technologies
SPA08N50C3XKSA1
Infineon Technologies