IXTQ86N25T
IXYS
IXYS
MOSFET N-CH 250V 86A TO3P
$6.35
Available to order
Reference Price (USD)
1+
$6.35400
500+
$6.29046
1000+
$6.22692
1500+
$6.16338
2000+
$6.09984
2500+
$6.0363
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTQ86N25T by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXTQ86N25T is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 540W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Diodes Incorporated
DMN3009LFVQ-13
Harris Corporation
RFP15N12
onsemi
NTND31215CZTAG
onsemi
FDU5N50NZTU
onsemi
FDMT800150DC-22897
Rohm Semiconductor
SCT2280KEGC11
Infineon Technologies
IPB65R125CFD7ATMA1
onsemi
FDC608PZ-F171
Microchip Technology
APTM50DAM17G
onsemi