YJD45G10A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 100V 45A TO-252
$0.82
Available to order
Reference Price (USD)
1+
$0.82000
500+
$0.8118
1000+
$0.8036
1500+
$0.7954
2000+
$0.7872
2500+
$0.779
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the YJD45G10A-F1-0000HF single MOSFET from Yangzhou Yangjie Electronic Technology Co.,Ltd. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the YJD45G10A-F1-0000HF combines cutting-edge technology with Yangzhou Yangjie Electronic Technology Co.,Ltd's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
SPP80N03S2-03
IXYS
IXTH75N10L2
STMicroelectronics
STFI7LN80K5
Vishay Siliconix
SUD35N10-26P-T4GE3
Infineon Technologies
IAUA250N04S6N007AUMA1
onsemi
FCPF7N60
STMicroelectronics
STW40N90K5
Infineon Technologies
BSC670N25NSFDATMA1
Vishay Siliconix
SIHD3N50D-GE3
Rohm Semiconductor