IXTT170N10P-TR
IXYS
IXYS
MOSFET N-CH 100V 170A TO268
$8.90
Available to order
Reference Price (USD)
1+
$8.89703
500+
$8.8080597
1000+
$8.7190894
1500+
$8.6301191
2000+
$8.5411488
2500+
$8.4521785
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXTT170N10P-TR single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXTT170N10P-TR combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 85A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 715W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Goford Semiconductor
G3404B
Harris Corporation
IRF9532
Renesas
2SK3402-ZK-E1-AY
Alpha & Omega Semiconductor Inc.
AONH36334
Rohm Semiconductor
RS6L120BGTB1
Infineon Technologies
IPS60R280PFD7SAKMA1
Renesas Electronics America Inc
2SJ601-ZK-E1-AZ
Harris Corporation
IRF730
Micro Commercial Co
MCU30P06Y-TP
Diodes Incorporated