RS6L120BGTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 60V 150A, HSOP8, POWER MOSFE
$3.77
Available to order
Reference Price (USD)
1+
$3.77000
500+
$3.7323
1000+
$3.6946
1500+
$3.6569
2000+
$3.6192
2500+
$3.5815
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RS6L120BGTB1 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's RS6L120BGTB1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tj)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPS60R280PFD7SAKMA1
Renesas Electronics America Inc
2SJ601-ZK-E1-AZ
Harris Corporation
IRF730
Micro Commercial Co
MCU30P06Y-TP
Diodes Incorporated
DMP3013SFK-7
Renesas
2SK3357-A
Diodes Incorporated
DMTH10H009LFG-7
Vishay Siliconix
SIHD11N80AE-T4-GE3
onsemi
NVMFWS3D0P04M8LT1G
Infineon Technologies