PJF8NA65A_T0_00001
Panjit International Inc.
Panjit International Inc.
650V N-CHANNEL MOSFET
$1.03
Available to order
Reference Price (USD)
1+
$1.03000
500+
$1.0197
1000+
$1.0094
1500+
$0.9991
2000+
$0.9888
2500+
$0.9785
Exquisite packaging
Discount
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Enhance your electronic projects with the PJF8NA65A_T0_00001 single MOSFET from Panjit International Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Panjit International Inc.'s PJF8NA65A_T0_00001 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB-F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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