IXTY01N100D-TRL
IXYS
IXYS
MOSFET N-CH 1000V 400MA TO252AA
$3.24
Available to order
Reference Price (USD)
1+
$3.24000
500+
$3.2076
1000+
$3.1752
1500+
$3.1428
2000+
$3.1104
2500+
$3.078
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTY01N100D-TRL by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXTY01N100D-TRL is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Taiwan Semiconductor Corporation
TSM850N06CX RFG
Infineon Technologies
IRFB4115PBF
Vishay Siliconix
SQA401CEJW-T1_GE3
Vishay Siliconix
SI7806ADN-T1-E3
Toshiba Semiconductor and Storage
TPN1110ENH,L1Q
Infineon Technologies
BSZ018NE2LSATMA1
Torex Semiconductor Ltd
XP261N7002TR-G
Diodes Incorporated
ZXMN2A02N8TA
Infineon Technologies
SPI07N65C3XKSA1
onsemi