IXTY12N06T
IXYS
IXYS
MOSFET N-CH 60V 12A TO252
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXTY12N06T from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXTY12N06T ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microsemi Corporation
APT30N60SC6
Toshiba Semiconductor and Storage
2SK2917(F)
Sanken
DKI03062
Infineon Technologies
IRL1104LPBF
Infineon Technologies
IRF8304MTR1PBF
Renesas Electronics America Inc
HAT2170H-EL-E
Alpha & Omega Semiconductor Inc.
AOD206_030
onsemi
FQPF9N50CYDTU
Vishay Siliconix
SI7409ADN-T1-GE3
Renesas Electronics America Inc