IXTY1N120PTRL
IXYS
IXYS
MOSFET N-CH 1200V 1A TO252
$2.40
Available to order
Reference Price (USD)
1+
$2.40360
500+
$2.379564
1000+
$2.355528
1500+
$2.331492
2000+
$2.307456
2500+
$2.28342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXTY1N120PTRL by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTY1N120PTRL is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVMTS1D6N10MCTXG
Infineon Technologies
IAUC60N10S5L110ATMA1
Toshiba Semiconductor and Storage
TK16G60W5,RVQ
Harris Corporation
IRF9622
UnitedSiC
UF4C120053K3S
Harris Corporation
HUF75332S3S
Diodes Incorporated
DMT6009LFG-13
Rohm Semiconductor
R6007KNXC7G
Diodes Incorporated
DMP4013LFGQ-13
Harris Corporation