IXTY1N80P
IXYS
IXYS
MOSFET N-CH 800V 1A TO252
$2.41
Available to order
Reference Price (USD)
70+
$1.57500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTY1N80P by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXTY1N80P is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRF840LCLPBF
Infineon Technologies
BSZ0501NSIATMA1
Fairchild Semiconductor
FQPF6N40C
NXP USA Inc.
BUK7E1R6-30E,127
Infineon Technologies
IPB60R099CPAATMA1
IXYS
IXFT26N100XHV
Rohm Semiconductor
RSF014N03TL
Transphorm
TP65H070LDG
Vishay Siliconix
IRFU1N60APBF
Infineon Technologies