IXXH110N65B4
IXYS
IXYS
DISC IGBT XPT-GENX4 TO-247AD
$13.31
Available to order
Reference Price (USD)
1+
$13.31133
500+
$13.1782167
1000+
$13.0451034
1500+
$12.9119901
2000+
$12.7788768
2500+
$12.6457635
Exquisite packaging
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Optimize your power systems with the IXXH110N65B4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXXH110N65B4 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 250 A
- Current - Collector Pulsed (Icm): 570 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
- Power - Max: 880 W
- Switching Energy: 2.2mJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 183 nC
- Td (on/off) @ 25°C: 26ns/146ns
- Test Condition: 400V, 55A, 2Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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