AIKQ200N75CP2XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH
$22.23
Available to order
Reference Price (USD)
1+
$22.23000
500+
$22.0077
1000+
$21.7854
1500+
$21.5631
2000+
$21.3408
2500+
$21.1185
Exquisite packaging
Discount
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Upgrade your power management systems with the AIKQ200N75CP2XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the AIKQ200N75CP2XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose AIKQ200N75CP2XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 600 A
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: 576 W
- Switching Energy: 15.3mJ (on), 7mJ (off)
- Input Type: Standard
- Gate Charge: 1256 nC
- Td (on/off) @ 25°C: 89ns/266ns
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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